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The Epitaxy Laboratory is dedicated for the fabrication of epitaxially grown Nitride materials for optical, electronic and magnetic applications as well as for basic research.
On substrates of sizes up to 4inch. In situ investigation of fabrication processes: measurement of surface and thermodynamic processes.
The laboratory is able to develop and supply optically active and magnetic materials. Characterization of surface properties is done under ultra high vacuum. Furthermore depth resolved chemical analysis and measurements of physical properties are performed with high resolutions and intensities.
We develop new materials and growth processes, supply template layers or heterostructures for business and research.


Epitaxial Nitride material development/fabrication by.

  • Molecular Beam Epitaxy
    Two-chamberPRO-100 III-N Scienta-Omicron MBE-System. Growth of Nitrides containing: Ga, Al, In, Mn, Cu, Fe, As, doping with Mg, Si and C is possible on wafers of up to 4 inch size.
  • Metal Organic Vapour Phase Epitaxy
    3x2inch AIXTRON closed coupled showerhead reactor with heater for temperatures up to 1200 °C.
    Available sources are TMGa, TEGa, TMIn, TMAl, CP2Mg, SiH4.

Material analyses:

The following analyses can be performed in the analysis chamber connected to the MBEs by UHV subsequently after growth or on any externally introduced sample:

  1. XPS with resolution of up to 0.85 eV or intensities of up to 25M counts/s.
  2. Monochromated XPS with resolution of up to 0.6 eV or intensities of up to 1.2M counts/s.
  3. Small-spot XPS with the smallest analysis area better than 70 µm.
    Fine focus ion source to etch holes with minimum sizes of 150µm for depth resolved XPS measurements
  4. Atomic Force Microscopy surface analysis
  5. Scanning tunneling microscopy surface analysis
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Posted by gkunert, Posted on 16.05.2016