Advanced Semiconductor Epitaxy Research Group
- Development of new materials and growth processes, delivery of various layers or heterostructures for science and industry.
- Production of epitaxial nitride layers by MBE and MOCVD methods, for optoelectronic and electronic applications, magnetic applications and basic research
- Production and development of optically active and magnetic materials on substrates up to 4 inches.
MBE cluster
The MBE cluster delivered by Scienta Omicron consist of two growth chambers each with 12 ports for effusion cells allowing to grow nitride based heterostructures for electronics, optoelectronics and spintronics. The growth chambers are connected under UHV conditions to the surface analysis chamber equipped with AFM, STM, XPS and UPS
MOVPE
The MOVPE reactor delivered by Aixtron is provided with a closed coupled showerhead (CCS reactor) and susceptor allowing for the simultaneous growth on three 2” wafers or one 4” wafer. The reactor is equipped with a LayTec EpiCurveTT in-situ measurement system for live control of substrate temperature and growth rate.Standard sources of organometallic compounds and reaction gases are used: TMGa, TEGa, TMIn, TMAl, Cp2Mg, NH3 and SiH4. Special sources such as Cp2Fe, Cp2Mn and CBr4 can be used on request.
Autor: Sieć Badawcza Łukasiewicz - PORT Polski Ośrodek Rozwoju Technologii, Opublikowano: 30.12.2020
