Advanced Semiconductor Epitaxy Research Group
In our group, molecular beam epitaxy (MBE) and metal-organic vapor phase deposition (MOVPE) are used for the development and study of new nitride based semiconductors in the fields of optics, electronics, optoelectronics and nano-magnetism.
The laboratory’s state of the art equipment for preparation, growth, and in-situ characterization of up to 4” diameter samples allow for high reliability and reproducibility of sample properties.
A wide range of in-situ and ex-situ characterization tools are available. A range of analyzes can be performed in the analysis chamber connected to the MBEs by UHV transfer. Analysis can be done after growth or on any externally introduced sample.
- Development of new materials and growth processes, delivery of various layers or heterostructures for science and industry.
- Production of epitaxial nitride layers by MBE and MOCVD methods, for optoelectronic and electronic applications, magnetic applications and basic research
- Production and development of optically active and magnetic materials on substrates up to 4 inches.
- XPS with a resolution of up to 0.85 eV or intensities of up to 25 M counts/s.
- Monochromated XPS with a resolution of up to 0.6 eV or intensities of up to 1.2 M counts/s.
- Small-spot XPS with the smallest analysis area better than 70 μm
Fine focus ion source to etch holes with minimum sizes of 150 μm for depth resolved XPS measurements
- Auger electron spectroscopy with a resolution of 0.5 at
- Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) surface analysis
The MBE cluster delivered by Scienta Omicron consist of two growth chambers each with 12 ports for effusion cells allowing to grow nitride based heterostructures for electronics, optoelectronics and spintronics. The growth chambers are connected under UHV conditions to the surface analysis chamber equipped with AFM, STM, XPS and UPS
The MOVPE reactor delivered by Aixtron is provided with a closed coupled showerhead (CCS reactor) and susceptor allowing for the simultaneous growth on three 2” wafers or one 4” wafer. The reactor is equipped with a LayTec EpiCurveTT in-situ measurement system for live control of substrate temperature and growth rate.Standard sources of organometallic compounds and reaction gases are used: TMGa, TEGa, TMIn, TMAl, Cp2Mg, NH3 and SiH4. Special sources such as Cp2Fe, Cp2Mn and CBr4 can be used on request.
Detlef Hommel – prof. Group leader
Robert Kudrawiec – prof.
Jean-Guy Rousset – PhD
Miłosz Grodzicki – PhD
Damian Pucicki – PhD
Krzysztof Adamczyk – PhD
Jarosław Serafińczuk – PhD
Wojciech Olszewski – mgr
Karolina Moszak – mgr
Dominika Majchrzak – mgr
Ewelina Zdanowicz – mgr
Paulina Ciechanowicz – mgr
Katarzyna Opolczynska – mgr
Aneta Mglosiek – mgr
Autor: abachmatiuk, Opublikowano: 08.10.2015